copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 0.1 ? )@v gs =10v gate charge ( typ 100 nc) improved dv/dt capability 100% avalanche tested general description this n - channel enhancement mode field - effect power transistor using samwin semiconductors advanced planar stripe, dmos technology intended for battery operated systems like a dc - dc converter motor control , ups ,audio amplifier. also, especially designed to minimize r ds(on) , low gate charge and high rugged avalanche characteristics. n - channel mosfet absolute maximum ratings thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 2.0 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c /w mar. 2011. rev. 2.0 1/7 bv dss : 100v i d : 17a r ds(on) : 0.1 ohm SW19N10 samwin 1 2 3 1 2 3 1. gate 2. drain 3. source to - 252 1 2 3 to - 220 symbol parameter value unit v dss drain to source voltage 100 v i d continuous drain current (@t c =25 o c) 17 a continuous drain current (@t c =100 o c) 11 a i dm drain current pulsed (note 1) 68 a v gs gate to source voltage 25 v e as single pulsed avalanche energy (note 2) 215 mj e ar repetitive avalanche energy (note 1) 7.5 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d total power dissipation (@t c =25 o c) 62.5 w derating factor above 25 o c 0.5 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c item sales type marking package packaging 1 sw p 19n10 SW19N10 to - 220 tube 2 sw d 19n10 SW19N10 to - 252 reel order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 100 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.1 - v/ o c i dss drain to source leakage current v ds =100v, v gs =0v - - 1 ua v ds =80v, t c =125 o c - - 100 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v - - 100 na v gs = - 20v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 30a - - 0.1 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 600 780 pf c oss output capacitance - 165 215 c rss reverse transfer capacitance - 32 40 t d(on) turn on delay time v ds =50v, i d =57a, r g =25? - 7.5 25 ns tr rising time - 150 310 t d(off) turn off delay time - 20 50 t f fall time - 65 140 q g total gate charge v ds =80v, v gs =10v, i d =57a - 19 25 nc q gs gate - source charge - 3.9 - q gd gate - drain charge - 9.0 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 15.6 a i sm pulsed source current - - 62.4 a v sd diode forward voltage drop. i s =57a, v gs =0v - - 1.5 v t rr reverse recovery time i s =57a, v gs =0v, di f /dt=100a/us - 78 - ns q rr breakdown voltage temperature - 200 - nc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 270uh, i as = 57a, v dd = 25v, r g =25?, starting t j = 25 o c 3. i sd 57a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/7 SW19N10 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 SW19N10 samwin 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v ? ? n o t e s : 1 . 2 5 0 ? s p u l s e t e s t 2. t c = 2 5 ? ? i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 10 0 10 1 10 2 175 o c 25 o c -55 o c ? ? n o t e s : 1. v ds = 25v 2 . 2 5 0 ? s p u l s e t e s t i d , drain current [a] v gs , gate-source voltage [v] 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v gs = 10v v gs = 20v ? ? n o t e : t j = 2 5 ? ? r ds(on) , d r a i n - s o u r c e o n - r e s i s t a n c e [ m ? ] i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 1 7 5 ? ? ? ? n o t e s : 1. v gs = 0v 2 . 2 5 0 ? s p u l s e t e s t 2 5 ? ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 c rss c oss c iss ? ? n o t e s : 1. v gs = 0v 2. f=1mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 v ds = 50v v ds = 80v ? ? n o t e : i d = 57 a v gs , gate-source voltage [v] q g , total gate charge [nc]
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve 4/7 fig 7. breakdown voltage variation vs. junction temperature SW19N10 samwin -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ? n o t e s : 1. v gs = 0 v 2. i d = 2 5 0 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? ? n o t e s : 1. v gs = 10 v 2. i d = 30 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 ? s operation in this area is limited by r ds(on) ? ? n o t e s : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 175 0 20 40 60 80 i d' drain current [a] t c' case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ? ? n o t e s : 1. z jc ( t ) = 0 . 9 2 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec]
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 SW19N10 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd 6/7 SW19N10 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. 7/7 SW19N10 samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn
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